US Patent Application 18216435. Storage Device and Preparation Method, Read-Write Method, Storage Chip and Electronic Device simplified abstract
Contents
Storage Device and Preparation Method, Read-Write Method, Storage Chip and Electronic Device
Organization Name
Inventor(s)
Storage Device and Preparation Method, Read-Write Method, Storage Chip and Electronic Device - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18216435 Titled 'Storage Device and Preparation Method, Read-Write Method, Storage Chip and Electronic Device'
Simplified Explanation
This abstract describes an application related to storage technology that aims to increase the quantity of storage states in a spin orbit torque-magnetic random access memory (STT-MRAM) while keeping the storage state change range unchanged. The application introduces a storage component consisting of a first magnetic tunnel junction, a spin orbit coupling layer, and a second magnetic tunnel junction. The first magnetic tunnel junction includes a first free layer, and the second magnetic tunnel junction includes a second free layer. These free layers are positioned on opposite surfaces of the spin orbit coupling layer. The abstract does not provide further details about the specific methods or techniques used in this application.
Original Abstract Submitted
Embodiments of this application provide a storage component, a preparation method, a reading/writing method, a storage chip, and an electronic device, is related to the storage technology field, and is used to resolve a problem that a quantity of storage states of a spin orbit torque-magnetic random access memory is increased while a storage state change range remains unchanged. The storage component includes: a first magnetic tunnel junction, a spin orbit coupling layer and a second magnetic tunnel junction that are sequentially arranged in a stacked manner. The first magnetic tunnel junction includes a first free layer, and the second magnetic tunnel junction includes a second free layer. The first free layer and the second free layer are arranged on two opposite surfaces of the spin orbit coupling layer.
