US Patent Application 18215707. SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hong-Yang Chen of Hsinchu City (TW)
Tian Sheng Lin of Yangmei Township (TW)
Yi-Cheng Chiu of New Taipei City (TW)
Hung-Chou Lin of Douliu City (TW)
Yi-Min Chen of Hsinchu City (TW)
Chiu-Hua Chung of Hsinchu City (TW)
SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18215707 Titled 'SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR'
Simplified Explanation
The abstract describes a capacitor structure used in a power semiconductor device. The structure includes a semiconductor substrate and an isolation insulating layer that has a ring shape and forms an opening in the center. On top of the isolation layer, there is a first electrode, followed by a dielectric layer, and finally a second electrode. This capacitor structure is designed to be used in power semiconductor devices.
Original Abstract Submitted
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
