US Patent Application 18215059. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Wen Chang of Hsinchu (TW)
Chien-Hsing Lee of Hsinchu (TW)
Chih-Sheng Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18215059 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
Simplified Explanation
This abstract describes a semiconductor device that consists of a first channel region on a substrate and a first gate structure on top of the channel region. The gate structure includes multiple layers, including a gate dielectric layer, a lower conductive gate layer, a ferroelectric material layer, and an upper conductive gate layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower conductive gate layer, and it has a U-shape cross section.
Original Abstract Submitted
A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.
