US Patent Application 18214348. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract
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Contents
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ching-Huang Chen of Hsinchu (TW)
Hsin-Chang Lee of Hsinchu (TW)
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18214348 titled 'EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a reflective mask used in various applications.
- The mask consists of a substrate, a reflective multilayer, a capping layer, and an absorber layer.
- The absorber layer is made up of alternating pairs of two different chromium (Cr) based layers.
- The purpose of the mask is to reflect light and absorb specific wavelengths.
- The innovation lies in the specific composition and arrangement of the absorber layer.
- This reflective mask can be used in industries such as semiconductor manufacturing, lithography, and optical coatings.
Original Abstract Submitted
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.
