US Patent Application 18213759. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Chieh Hsiao of Shetou Township (TW)
Hsiang-Ku Shen of Hsinchu City (TW)
Yuan-Yang Hsiao of Taipei (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18213759 Titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF'
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. It involves creating an opening in a layer of material, exposing a lower conductive layer. Additional layers of conductive material are then added to the exposed area, as well as the inner sidewall of the opening and the surface of the surrounding material. A main conductive layer is then applied over these layers, and the entire structure is patterned to create a desired design. Finally, a cover conductive layer is added, which wraps around the patterned main conductive layer and one of the previously added conductive layers.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.
