US Patent Application 18212304. METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Junggil Yang of Hwaseong-si (KR)
Donghyi Koh of Hwaseong-si (KR)
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18212304 Titled 'METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE'
Simplified Explanation
This abstract describes an integrated circuit device that includes a substrate with two device regions. Each device region has a fin active region, which is covered by an isolation film. On top of the isolation film, there are gate cut insulating patterns and a gate line that extends across the fin active regions. The length of the gate line is limited by the gate cut insulating patterns. Additionally, there is an inter-region insulating pattern on the isolation film between the fin active regions. This inter-region insulating pattern partially penetrates the gate line in a vertical direction and has a bottom surface near the substrate, a top surface away from the substrate, and a side wall that extends from the bottom to the top surface.
Original Abstract Submitted
An integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolation film covering side walls of the active regions; gate cut insulating patterns on the isolation film on the device regions; a gate line extending on the fin active regions, the gate line having a length limited by the gate cut insulating patterns; and an inter-region insulating pattern on the isolation film between the fin active regions and at least partially penetrating the gate line in a vertical direction, wherein the inter-region insulating pattern has a bottom surface proximate to the substrate, a top surface distal to the substrate, and a side wall linearly extending from the bottom to the top surface.
