US Patent Application 18211561. DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Tsung-Chieh Hsiao of Changhua (TW)

Hsiang-Ku Shen of Hsinchu (TW)

Yuan-Yang Hsiao of Taipei (TW)

Ying-Yao Lai of Hsinchu (TW)

Dian-Hau Chen of Hsinchu (TW)

DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18211561 Titled 'DEVICE STRUCTURE AND METHODS OF FORMING THE SAME'

Simplified Explanation

The abstract describes a device structure and the methods used to create it. The structure includes several layers such as a passivation layer, a buffer layer, a barrier layer, a redistribution layer, an adhesion layer, and a second passivation layer. These layers are arranged in a specific order and are in contact with each other. The abstract does not provide any specific details about the purpose or function of the device structure.

Original Abstract Submitted

A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.