US Patent Application 18209231. MEMORY DEVICE INCLUDING SUPPORT STRUCTURES simplified abstract
Contents
MEMORY DEVICE INCLUDING SUPPORT STRUCTURES
Organization Name
Inventor(s)
Andrew Zhe Wei Ong of Singapore (SG)
Soo Ting Helen Yee of Singapore (SG)
MEMORY DEVICE INCLUDING SUPPORT STRUCTURES - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18209231 Titled 'MEMORY DEVICE INCLUDING SUPPORT STRUCTURES'
Simplified Explanation
The abstract describes various embodiments of apparatuses and methods for forming those apparatuses. One specific apparatus includes multiple tiers of memory cells and control gates stacked on top of each other on a substrate. The control gates are arranged in a staircase-like structure, with conductive contacts making contact with them at specific locations. A dielectric structure is located on the sidewalls of the control gates, and support structures are positioned adjacent to the conductive contacts. These support structures have vertical lengths extending from the substrate and are located at a specific distance from the edge of the dielectric structure. The ratio of the width of the support structure to this distance falls within the range of 1.6 to 2.0.
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers of respective memory cells and control gates, the tier located one over another over a substrate, the control gates including a control gate closest to the substrate, the control gates including respective portions forming a staircase structure; conductive contacts contacting the control gates at a location of the staircase structure, the conductive contacts including a conductive contact contacting the control gate; a dielectric structure located on sidewalls of the control gates; and support structures adjacent the conductive contacts and having lengths extending vertically from the substrate, the support structures including a support structure closest to the conductive contact, the support structure located at a distance from an edge of the dielectric structure, wherein a ratio of a width of the support structure over the distance is ranging from 1.6 to 2.0.
