US Patent Application 18209204. MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS simplified abstract
Contents
MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS
Organization Name
Inventor(s)
Paolo Tessariol of Montebelluna (IT)
David H. Wells of Boise ID (US)
Umberto Maria Meotto of Dietlikon (CH)
MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18209204 Titled 'MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS'
Simplified Explanation
The abstract describes a technology that involves the creation of apparatuses using different layers of conductive and dielectric materials. These apparatuses contain memory cell strings with pillars that extend through the layers. The apparatus also includes two separate dielectric structures that are formed in slits, which separate the layers and pillars into distinct portions. These dielectric structures have different widths.
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a first dielectric structure formed in a first slit through the levels of conductive materials and the levels of dielectric materials; a second dielectric structure formed in a second slit through the levels of conductive materials and the levels of dielectric materials; the first dielectric structure and the second dielectric structure separating the levels of conductive materials, the levels of dielectric materials, and the pillars into separate portions, and the first and second dielectric structures including different widths.
