US Patent Application 18207499. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
Contents
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
Shuangqiang Luo of Boise ID (US)
Indra V. Chary of Boise ID (US)
Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18207499 Titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies'
Simplified Explanation
The abstract describes an integrated assembly that includes different memory regions and an intermediate region. A stack, made up of conductive and insulative levels, extends across these regions. Channel-material-pillars are arranged within the memory regions, and memory-block-regions extend longitudinally across the memory regions and the intermediate region. Staircase regions are present in the intermediate region, overlapping two of the memory-block-regions. First panel regions extend across the staircase regions, while second panel regions provide lateral separation between adjacent memory-block-regions. The second panel regions are different in size or composition compared to the first panel regions. The abstract also mentions methods of forming these integrated assemblies.
Original Abstract Submitted
Some embodiments include an integrated assembly having a first memory region, a second memory region, and an intermediate region between the memory regions. A stack extends across the memory regions and the intermediate region. The stack includes alternating conductive levels and insulative levels. Channel-material-pillars are arranged within the memory regions. Memory-block-regions extend longitudinally across the memory regions and the intermediate region. Staircase regions are within the intermediate region. Each of the staircase regions laterally overlaps two of the memory-block-regions. First panel regions extend longitudinally across at least portions of the staircase regions. Second panel regions extend longitudinally and provide lateral separation between adjacent memory-block-regions. The second panel regions are of laterally different dimensions than the first panel regions and/or are compositionally different than the first panel regions. Some embodiments include methods of forming integrated assemblies.
