US Patent Application 18204020. NEUROMORPHIC DEVICE simplified abstract
Contents
NEUROMORPHIC DEVICE
Organization Name
SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==
[[Category:Youngnam Hwang of Suwon-si (KR)]]
NEUROMORPHIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18204020 titled 'NEUROMORPHIC DEVICE
Simplified Explanation
- The patent application describes a neuromorphic device that includes a memory cell array and an analog to digital converter (ADC) circuit. - The memory cell array consists of different types of resistive memory cells connected to various lines. - The first resistive memory cells store data related to the weight of a neural network. - The memory cell array can generate multiple read currents based on input signals and the stored data. - The ADC circuit is responsible for converting the read currents into digital signals.
Original Abstract Submitted
A neuromorphic device includes a memory cell array including first resistive memory cells connected to word lines, bit lines and source lines, second resistive memory cells connected to the word lines, at least one redundancy bit line and at least one redundancy source line, third resistive memory cells connected to at least one redundancy word line, the bit lines and the source lines. The memory cell array stores data corresponding to a weight of a neural network in the first resistive memory cells, and is configured to generate a plurality of read currents based on input signals and the data. The neuromorphic device further includes an analog to digital converter (ADC) circuit configured to convert the plurality of read currents into a plurality of digital signals.
