US Patent Application 18200852. MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS simplified abstract
Contents
MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS
Organization Name
Inventor(s)
Kar Wui Thong of Boise ID (US)
Harsh Narendrakumar Jain of Boise ID (US)
John Hopkins of Meridian ID (US)
MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18200852 Titled 'MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS'
Simplified Explanation
The abstract describes a technology that involves the creation of apparatuses using conductive and dielectric materials. These apparatuses consist of memory cell strings with pillars that pass through layers of conductive and dielectric materials. A dielectric structure is formed in a slit, separating the conductive and dielectric materials into two portions. There are also first and second conductive structures located over and connected to the pillars of the memory cell strings. Finally, a conductive line is in contact with the dielectric structure and the conductive structures.
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a dielectric structure formed in a slit, the slit extending through the levels of conductive materials and the levels of dielectric materials, the dielectric structure separating the levels of conductive materials and the levels of dielectric materials into a first portion and a second portion; first conductive structures located over and coupled to respective pillars of the first memory cell strings; second conductive structures located over and coupled to respective pillars of the second memory cell strings; and a conductive line contacting the dielectric structure, a conductive structure of the first conductive structures, and a conductive structure of the second conductive structures.
