US Patent Application 18199001. Thin Film Transistor and Display Device Including the Same simplified abstract
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Thin Film Transistor and Display Device Including the Same
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Thin Film Transistor and Display Device Including the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199001 titled 'Thin Film Transistor and Display Device Including the Same
Simplified Explanation
- The patent application describes an organic light emitting display device that uses an oxide semiconductor pattern in the driving thin film transistor (TFT). - The driving TFT includes a gate electrode placed under the oxide semiconductor pattern, and a dummy electrode, source electrode, and drain electrode placed over the oxide semiconductor pattern. - The dummy electrode is electrically connected to the source electrode, which increases the S-factor (a measure of transistor performance) of the driving TFT. - The organic light emitting display device also includes multiple switching TFTs with oxide semiconductor patterns. - These switching TFTs have different distances between the oxide semiconductor pattern and the gate electrode, resulting in different threshold voltages. - The purpose of this innovation is to improve the performance and functionality of the organic light emitting display device.
Original Abstract Submitted
Provided is an organic light emitting display device in which a driving thin film transistor (TFT) includes an oxide semiconductor pattern. The driving thin film transistor includes a gate electrode disposed under an oxide semiconductor pattern, and a dummy electrode, a source electrode and a drain electrode over the oxide semiconductor pattern, and the dummy electrode is electrically connected to the source electrode to increase the S-factor of the driving TFT. In addition, the organic light emitting display device of the present disclosure includes a plurality of switching TFTs including an oxide semiconductor pattern, and the plurality of switching TFTs includes a plurality of switching thin film transistors having different distances between the oxide semiconductor pattern and the gate electrode so as to have different threshold voltages.
