US Patent Application 18195181. REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES simplified abstract
Contents
REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES
Organization Name
Inventor(s)
Aaron Yip of Los Gatos CA (US)
REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18195181 titled 'REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES
Simplified Explanation
- The patent application describes a method for programming memory cells in a block of memory cells. - During the first portion of the programming operation, the channel material of a string of memory cells in an unselected sub-block is precharged to a precharge voltage. - During the second portion of the programming operation, a programming voltage is applied to a selected memory cell in a selected sub-block. - The selected memory cell is connected to the same access line as an unselected memory cell in the unselected sub-block. - The patent application also discloses additional methods and apparatus related to this programming technique.
Original Abstract Submitted
Apparatus and methods are disclosed, such as a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then be applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The selected memory cell is coupled to a same access line as an unselected memory cell in the unselected sub-block. Additional methods and apparatus are disclosed.
