US Patent Application 18193980. SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Hitoshi Yamada of Nisshin-shi (JP)

Yuki Kamata of Nisshin-shi (JP)

Koichi Oyama of Nisshin-shi (JP)

Yutaka Ohnishi of Kawasaki-shi (JP)

Kenichi Nishi of Kawasaki-shi (JP)

Keizo Takemasa of Kawasaki-shi (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18193980 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a semiconductor device that contains a group of quantum dots. These quantum dots are arranged in layers, with each layer having a different central wavelength at which it has the maximum gain. The layers are stacked in such a way that the central wavelengths shift sequentially along a specific direction. The group also includes a longest wavelength layer group, which consists of some quantum dot layers, including one layer with the longest central wavelength, and at least one additional layer stacked on top of it. The longest wavelength layer or group has a higher gain at its central wavelength compared to the other quantum dot layers.

Original Abstract Submitted

In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.