US Patent Application 18191533. SEMICONDUCTOR PRESSURE SENSOR simplified abstract
Contents
SEMICONDUCTOR PRESSURE SENSOR
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Hirofumi Konishi of Tokyo (JP)
SEMICONDUCTOR PRESSURE SENSOR - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18191533 Titled 'SEMICONDUCTOR PRESSURE SENSOR'
Simplified Explanation
This abstract describes a semiconductor pressure sensor that consists of two silicon substrates. The second silicon substrate has a recess with a support protruding towards the first silicon substrate. The support is in the shape of a rectangular frame with four side parts. The recess and the first silicon substrate create an inner and outer cavity. The first silicon substrate has piezoresistive elements on its other surface, which are positioned near the support.
Original Abstract Submitted
A semiconductor pressure sensor includes a first silicon substrate and a second silicon substrate. One main surface of the second silicon substrate has a recess formed therein. The recess has a support that protrudes toward the first silicon substrate formed therein. The support includes four side parts that are arranged to form a rectangular frame shape. The recess and the first silicon substrate have an inner cavity and an outer cavity that are formed therebetween. The inner cavity is arranged on an inner side of the support, and the outer cavity is arranged on an outer side of the support. The other main surface of the first silicon substrate has piezoresistive elements formed therein. The piezoresistive elements are arranged at or in the vicinity of a position overlapping the support, as seen from a normal direction of the first silicon substrate.
