US Patent Application 18191092. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
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Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Tai-Hao Peng of Hsinchu City (TW)
Yao-Tsung Huang of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18191092 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a semiconductor device with multiple layers and integrated circuits (SoCs) connected through a bridge die.
- The device consists of a first layer structure and a second layer structure.
- A bridge die is placed between the first and second layer structures.
- The second layer structure houses the first SoC and the second SoC.
- The first SoC and the second SoC are connected electrically through the bridge die.
Original Abstract Submitted
A semiconductor device includes a first layer structure, a second layer structure, a bridge die, a first SoC and a second SoC. The bridge die is disposed between the first layer structure and the second layer structure. The first SoC and the second SoC are disposed on the second layer structure. The first SoC and the second SoC are electrically connected through the bridge die.
