US Patent Application 18190754. Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof simplified abstract

Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chih-Ching Wang of Kinmen County (TW)

Jon-Hsu Ho of New Taipei City (TW)

Wen-Hsing Hsieh of Hsinchu City (TW)

Kuan-Lun Cheng of Hsin-chu (TW)

Zhiqiang Wu of Hsinchu City (TW)

Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18190754 Titled 'Channel Configuration for Improving Multigate Device Performance and Method of Fabrication Thereof'

Simplified Explanation

This abstract describes multi-gate devices and the methods used to fabricate them. The devices consist of a channel layer, two source/drain features, and a metal gate. The channel layer is made up of a first and second horizontal segment, connected by a vertical segment. The horizontal segments extend in one direction, while the vertical segment extends in another direction. The vertical segment is thicker than it is wide. The channel layer is positioned between the two source/drain features, and the metal gate wraps around it. In certain cases, the horizontal segments are nanosheets.

Original Abstract Submitted

Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.