US Patent Application 18188821. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
SHOSUKE Nakabayashi of Nisshin-shi (JP)
MASATAKE Nagaya of Nisshin-shi (JP)
CHIAKI Sasaoka of Nagoya-shi (JP)
SHOICHI Onda of Nagoya-shi (JP)
DAISUKE Kawaguchi of Hamamatsu-shi (JP)
RYUJI Sugiura of Hamamatsu-shi (JP)
TOSHIKI Yui of Hamamatsu-shi (JP)
KEISUKE Hara of Hamamatsu-shi (JP)
TOMOMI Aratani of Hamamatsu-shi (JP)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18188821 Titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a manufacturing method for a semiconductor device. The method involves creating a gas vent recess in a compound semiconductor substrate, which has multiple device regions. An altered layer is then formed inside the substrate using a laser beam, extending along the surface at a depth corresponding to the gas vent recess. The substrate is then divided at the altered layer into two parts - one with the original surface and the other with the opposite surface. Finally, a metal film is applied to cover the divided surface of the first part, while leaving the gas vent recess exposed.
Original Abstract Submitted
A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.
