US Patent Application 18183571. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seungwoo Jang of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18183571 Titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. In this method, a first precursor is applied to a substrate to absorb a first element onto a specific region of the substrate. Then, a second precursor is applied to absorb a second element onto a different region of the substrate. Finally, a reactant containing oxygen is applied to the substrate to form an oxide semiconductor layer that includes the first and second elements as well as the oxygen from the reactant.
Original Abstract Submitted
A method of manufacturing a semiconductor device including providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate, providing a second precursor on the substrate to adsorb a second element of the second precursor onto a second region of the substrate, the second region being different from the first region, and providing a reactant including oxygen on the substrate to form an oxide semiconductor layer including the first element of the first precursor, the second element of the second precursor, and the oxygen of the reactant may be provided.
