US Patent Application 18182539. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Moonyoung Jeong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18182539 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The abstract describes a semiconductor memory device that includes various components and features.
- The device includes a bit line that extends in a first direction.
- There are first and second active patterns positioned on the bit line.
- A back-gate electrode is placed between the first and second active patterns and crosses the bit line in a second direction.
- A first word line is located on the side of the first active pattern and extends in the second direction.
- A second word line is positioned on the opposite side of the second active pattern and extends in the second direction.
- Contact patterns are connected to the first and second active patterns.
Original Abstract Submitted
A semiconductor memory device is disclosed. The semiconductor memory device may include a bit line extending in a first direction, first and second active patterns disposed on the bit line, a back-gate electrode, which is disposed between the first and second active patterns and is extended in a second direction to cross the bit line, a first word line, which is provided at a side of the first active pattern and is extended in the second direction, a second word line, which is provided at an opposite side of the second active pattern and is extended in the second direction, and contact patterns coupled to the first and second active patterns, respectively.
