US Patent Application 18177373. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Takashi Tsubakidani of Tokyo (JP)

Chihiro Tadokoro of Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18177373 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with a semiconductor substrate, an oxide film, and an organic insulating film.

  • The device has an effective region for current flow and a termination region surrounding the effective region.
  • An oxide film is placed on top of the termination region to cover it.
  • An organic insulating film, made of an insulating material, covers a portion of the oxide film, excluding the peripheral area.
  • The portion of the oxide film covered by the organic insulating film has either a downward concave groove or an upward protruding ridge.
  • The groove has a section where its width decreases upwards, while the ridge has a section where its width increases upwards.


Original Abstract Submitted

A semiconductor device includes a semiconductor substrate in which an effective region through which a current flows and a termination region formed so as to surround an outer peripheral side of the effective region are defined, an oxide film provided in contact with an upper surface of the termination region so as to cover the upper surface, an organic insulating film containing an insulating material and provided so as to cover a portion of the oxide film excluding the peripheral portion, and at least one of a groove concave downward and a ridge protruding upward in the portion of the oxide film covered with the organic insulating film, in which the groove has a portion in which a width thereof decreases upward, and the ridge has a portion in which the width thereof increases upward.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18177373._SEMICONDUCTOR_DEVICE_AND_METHOD_OF_MANUFACTURING_SEMICONDUCTOR_DEVICE_simplified_abstract&oldid=11841"