US Patent Application 18177021. SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract
Contents
SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18177021 Titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS'
Simplified Explanation
The abstract describes a semiconductor device that consists of alternating regions of insulated gate bipolar transistor (IGBT) and diode regions arranged in a linear pattern. In this alternating region, the width of the IGBT region closest to the center of the cell region is either equal to or smaller than the widths of the other IGBT regions in the same direction. Similarly, the width of the diode region closest to the center of the cell region is also equal to or smaller than the widths of the other diode regions in the same direction.
Original Abstract Submitted
A semiconductor device has an alternating region in which insulated gate bipolar transistor (IGBT) regions and diode regions are alternately arranged linearly in a plan view. In the alternating region, a width, in the first direction, of an IGBT region closest to the center of a cell region is equal to or smaller than widths of other IGBT regions in the first direction, and a width, in the first direction, of a diode region closest to a center of the cell region is equal to or smaller than widths of other diode regions in the first direction.
