US Patent Application 18176750. CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE simplified abstract
CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE
Inventors
Youngjae Kang of Suwon-si (KR)
Yongyoung Park of Suwon-si (KR)
Wooyoung Yang of Suwon-si (KR)
Changseung Lee of Suwon-si (KR)
CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE - A simplified explanation of the abstract
- This abstract for appeared for patent application number 18176750 Titled 'CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE'
Simplified Explanation
The abstract describes a type of chalcogenide material that contains specific elements such as germanium, arsenic, sulfur, selenium, and a group III metal (indium, gallium, or aluminum). The composition of the material is defined by the percentage of each element present. For example, the content of germanium is between 10% and 30%, arsenic is between 30% and 50%, selenium is between 20% and 60%, sulfur is between 0.5% and 10%, and the group III metal is between 0.5% and 10%.
Original Abstract Submitted
A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.
