US Patent Application 18175445. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Inventors
Hyuncheol Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- This abstract for appeared for patent application number 18175445 Titled 'SEMICONDUCTOR MEMORY DEVICE'
Simplified Explanation
This abstract describes a semiconductor memory device that consists of multiple memory cells arranged on a substrate. Each memory cell includes two transistors stacked on top of each other. The first transistor has a channel region between a source region and a drain region, a gate electrode, and a gate insulating layer. The second transistor has a pillar structure with a drain region, a channel region, and a source region stacked on top of the first transistor. It also has a gate electrode on one side of the channel region and a gate insulating layer between the channel region and the gate electrode. The drain and source regions of the second transistor have different types of impurity regions.
Original Abstract Submitted
A semiconductor memory device includes a plurality of memory cells arranged on a substrate. Each of the plurality of memory cells may include a first transistor on the substrate and a second transistor on the first transistor. The first transistor may include a first channel region between a first source region and a first drain region, a first gate electrode, and a first gate insulating layer. The second transistor may include a pillar structure having a second drain region, a second channel region and a second source region sequentially stacked on the first gate electrode, a second gate electrode on one side of the second channel region, and a second gate insulating layer between the second channel region and the second gate electrode. The second drain region and the second source region may have a first conductivity type impurity region and a second conductivity type impurity region, respectively.
