US Patent Application 18171171. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:SEOKHAN Park of YONGIN-SI (KR)]]

[[Category:KISEOK Lee of SUWON-SI (KR)]]

[[Category:SEOKHO Shin of SUWON-SI (KR)]]

[[Category:HYUNGEUN Choi of SUWON-SI (KR)]]

[[Category:BOWON Yoo of SUWON-SI (KR)]]

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18171171 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device with bit line structures on a substrate.

  • The bit line structures extend in one direction and are spaced apart from each other in another direction.
  • Semiconductor patterns are placed on each bit line structure, with insulating interlayer patterns between them.
  • Word lines are also placed on the bit line structures, adjacent to the semiconductor patterns.
  • Capacitors are connected to the semiconductor patterns.
  • Each insulating interlayer pattern has a seam extending in the second direction.


Original Abstract Submitted

A semiconductor device includes bit line structures on a substrate. Each bit line structure extends in a second direction, and the bit line structures are spaced apart from each other in a first direction. The semiconductor device further includes semiconductor patterns spaced apart from each other in the second direction on each of the bit line structures, insulating interlayer patterns between neighboring ones of the semiconductor patterns in the first direction, and word lines spaced apart from each other in the second direction on the bit line structures. Each word line extends in the first direction adjacent to the semiconductor patterns. The semiconductor device further includes capacitors disposed on and electrically connected to the semiconductor patterns, respectively. A seam extending in the second direction is formed in each of the insulating interlayer patterns.