US Patent Application 18170652. IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Hyungkeun Gweon of Suwon-si (KR)
Keo-Sung Park of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18170652 titled 'IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor with an antireflection structure and a pixel separation part.
- The image sensor includes a first substrate with a pixel array region and an edge region.
- The second surface of the first substrate has an antireflection structure, which includes multiple layers stacked on top of each other.
- The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer.
- The first, second, and third dielectric layers are made of different materials.
- The third dielectric layer on the edge region penetrates the second dielectric layer and the titanium oxide layer to contact the first dielectric layer.
Original Abstract Submitted
Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.
