US Patent Application 18166854. VERTICAL SEMICONDUCTOR DEVICE simplified abstract
Contents
VERTICAL SEMICONDUCTOR DEVICE
Inventors
VERTICAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for patent application number 18166854 Titled 'VERTICAL SEMICONDUCTOR DEVICE'
Simplified Explanation
The abstract describes a vertical semiconductor device that consists of a substrate, a pattern structure, and a channel structure. The pattern structure is made up of insulation patterns and gate structures stacked vertically on the substrate. The channel structure runs through the pattern structure and extends vertically. It includes a data storage structure on the inner surface of the channel hole, a channel that contacts the data storage structure, a lower pattern positioned at the bottom of the channel hole, and a filling insulation pattern covering the channel and lower pattern. The channel has a cylindrical shape, and the lower pattern contains silicon and germanium in the form of oxide.
Original Abstract Submitted
A vertical semiconductor device may include a substrate, a pattern structure on the substrate, and a channel structure in a channel hole passing through the pattern structure. The pattern structure may include insulation patterns and gate structures alternately stacked in a vertical direction perpendicular to an upper surface of the substrate. The channel structure may extend in the vertical direction. The channel structure may include a data storage structure on an inner surface of the channel hole, a channel contacting the data storage structure, a lower pattern on the channel positioned at a lower portion of the channel hole, and a filling insulation pattern on the channel and the lower pattern. The channel may have a cylindrical shape. The lower pattern may include an oxide including silicon and germanium.
