US Patent Application 18164228. IMAGE SENSOR simplified abstract

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IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Junghye Kim of Suwon-si (KR)


Donghyun Kim of Suwon-si (KR)


Sung In Kim of Suwon-si (KR)


Kyoungeun Chang of Suwon-si (KR)


Jae Ho Kim of Suwon-si (KR)


IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18164228 titled 'IMAGE SENSOR

Simplified Explanation

This patent application describes an image sensor with a pixel separation part that separates pixels on a substrate. The pixel separation part includes four sidewalls that define a first pixel. The first pixel has a source follower gate electrode and three impurity regions adjacent to different corners of the sidewalls.

Key points of the patent application:

- Image sensor with a pixel separation part in a substrate to separate pixels. - The pixel separation part includes four sidewalls that define a first pixel. - The first pixel has a source follower gate electrode adjacent to two sidewalls. - Three impurity regions are adjacent to different corners of the sidewalls. - The second and third impurity regions are electrically connected to each other.


Original Abstract Submitted

An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.