US Patent Application 18158692. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Seonghun Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18158692 Titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME'
Simplified Explanation
This abstract describes a semiconductor device that consists of an insulating structure and two conductive structures within it. The first conductive structure has two layers, while the second conductive structure only has one layer. The width of the first conductive structure is larger than the second conductive structure. The first layer of the first conductive structure, the second layer of the first conductive structure, and the first layer of the second conductive structure all contain the same nonmetal element. However, the concentration of this nonmetal element in the second layer of the first conductive structure is higher than in the other two layers.
Original Abstract Submitted
A semiconductor device includes an insulating structure, a first conductive structure in the insulating structure, the first conductive structure including a first conductive layer and a second conductive layer, and a second conductive structure in the insulating structure, the second conductive structure including a first conductive layer of the second conductive structure. A width of the first conductive structure is larger than a width of the second conductive structure. The first conductive layer of the first conductive structure, the second conductive layer of the first conductive structure, and the first conductive layer of the second conductive structure include a same nonmetal element. A concentration of the nonmetal element in the second conductive layer of the first conductive structure is higher than a concentration of the nonmetal element in the first conductive layer of the first conductive structure and first conductive layer of the second conductive structure.
