US Patent Application 18152310. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract

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SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Hyunmog Park of Suwon-si (KR)


Bongyong Lee of Suwon-si (KR)


SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18152310 Titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME'

Simplified Explanation

The abstract describes a semiconductor device that includes gate electrodes, vertical structures, and upper interconnection structures. The vertical structures consist of a back gate electrode, a ferroelectric material layer, a channel layer, and a gate insulating layer. The upper interconnection structures include bit lines, contact plugs, and back gate interconnections. The first upper interconnection structure connects to the first vertical structure, while the second upper interconnection structure connects to the second vertical structure.


Original Abstract Submitted

A semiconductor device includes gate electrodes extending in a first direction, first and second vertical structures passing through the gate electrodes, a first upper interconnection, and a second upper interconnection structure, the first and second vertical structures including a back gate electrode, a ferroelectric material layer, a channel layer, and a gate insulating layer, the first upper interconnection structure including bit lines extending in a second direction, a first contact plug connected to a lower surface of a first back gate electrode of the first vertical structure, and a first back gate interconnection extending between the bit lines in the second direction and connected to the first contact plug, and the second upper interconnection structure including a second contact plug connected to an upper surface of a second back gate electrode of the second vertical structure, and a second back gate interconnection extending in the second direction and connected to the second contact plug.