US Patent Application 18150415. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Inventors

Donghoon Kwon of Hwaseong-si (KR)

Boun Yoon of Seoul (KR)

Kihoon Jang of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for patent application number 18150415 Titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME'

Simplified Explanation

This abstract describes a semiconductor device that consists of two semiconductor structures. The first structure has a substrate, and the second structure is built on top of it. The second structure includes stacked gate electrodes, insulating layers, through-insulating regions, a capping insulating layer, and an upper insulating layer. There are also channel structures, contact plugs, bit lines, and conductive patterns. The conductive patterns have connection portions that are part of the contact plugs.

Original Abstract Submitted

A semiconductor device includes a first semiconductor structure including a first substrate and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure includes gate electrodes stacked on the second substrate, interlayer insulating layers alternately stacked with the gate electrodes, through-insulating regions passing through the gate electrodes in a second region, a capping insulating layer covering the gate electrodes and the interlayer insulating layers, an upper insulating layer on the capping insulating layer, channel structures passing through the capping insulating layer and the gate electrodes in a first region, upper contact plugs passing through the upper insulating layer, bit lines on the upper insulating layer, first contact plugs passing through the capping insulating layer, and conductive patterns including second contact plugs passing through each of the through-insulating regions in the second region. The conductive patterns include connection portions integral with the second contact plugs.