US Patent Application 18149929. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Inventors

Bongyong Lee of Suwon-si (KR)


Taeyoung Kim of Suwon-si (KR)


Hyunmog Park of Suwon-si (KR)


Siyeon Cho of Suwon-si (KR)


SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

  • This abstract for appeared for patent application number 18149929 Titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME'

Simplified Explanation

This abstract describes a semiconductor device that consists of two substrate structures. The first substrate structure includes a substrate, circuit elements, and bonding layers. The second substrate structure is placed on top of the first one and includes a plate layer, an insulating layer made of silicon nitride, gate electrodes, and a channel structure with a semiconductor layer. The two substrate structures are connected through bonding layers. The channel hole in the second substrate structure has a narrower width in the portion passing through the gate electrodes and a wider width in the portion passing through the insulating layer.


Original Abstract Submitted

A semiconductor device may include a first substrate structure including a substrate, circuit elements on the substrate, and first bonding layers on the circuit elements, and a second substrate structure on the first substrate structure. The second substrate structure may include a plate layer, an intermediate insulating layer below the plate layer and including silicon nitride, gate electrodes below the intermediate insulating layer and stacked to be spaced apart from each other in a vertical direction, a channel structure in a channel hole passing through the intermediate insulating layer and the gate electrodes and including a semiconductor layer, and second bonding layers connected to the first bonding layers. The channel hole may have a first width in a first portion passing through the gate electrodes and a second width, wider than the first width, in a second portion passing through the intermediate insulating layer.