US Patent Application 18138551. MEMORY PROGRAMMING USING CONSECUTIVE COARSE-FINE PROGRAMMING OPERATIONS OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract

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MEMORY PROGRAMMING USING CONSECUTIVE COARSE-FINE PROGRAMMING OPERATIONS OF THRESHOLD VOLTAGE DISTRIBUTIONS

Organization Name

Micron Technology, Inc.


Inventor(s)

Huai-Yuan Tseng of San Ramon CA (US)

Giovanni Maria Paolucci of Milano (IT)

Kishore Kumar Muchherla of Fremont CA (US)

James Fitzpatrick of Laguna Niguel CA (US)

Akira Goda of Tokyo (JP)

MEMORY PROGRAMMING USING CONSECUTIVE COARSE-FINE PROGRAMMING OPERATIONS OF THRESHOLD VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18138551 titled 'MEMORY PROGRAMMING USING CONSECUTIVE COARSE-FINE PROGRAMMING OPERATIONS OF THRESHOLD VOLTAGE DISTRIBUTIONS

Simplified Explanation

The patent application describes a method for programming memory cells in a memory array.

  • The method involves programming a first set of memory cells with a first set of threshold voltage distributions.
  • A second set of memory cells, adjacent to the first set, is programmed with a second set of threshold voltage distributions.
  • After programming the second set of cells, the first set of memory cells is coarse programmed with an intermediate third set of threshold voltage distributions, which is twice in number compared to the first set.
  • The first set of memory cells is then fine programmed with a final third set of threshold voltage distributions.
  • Some threshold voltage distributions in the final set have wider read window margins compared to the intermediate set.


Original Abstract Submitted

A method includes causing a first set of memory cells, associated with a first wordline of a memory array, to be programmed with a first set of threshold voltage distributions; causing a second set of memory cells, associated with a second wordline adjacent to the first wordline, to be programmed with a second set of threshold voltage distributions; after programming the second set of cells, causing the first set of memory cells to be coarse programmed with an intermediate third set of threshold voltage distributions that is at least twice in number compared to the first set; and causing the first set of memory cells to be fine programmed with a final third set of threshold voltage distributions. At least some threshold voltage distributions of the final third set of threshold voltage distributions have wider read window margins than those of the intermediate third set of threshold voltage distributions.

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