US Patent Application 18136464. SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DEVICE INCLUDING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DEVICE INCLUDING THE SAME
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SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18136464 Titled 'SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DEVICE INCLUDING THE SAME'
Simplified Explanation
The abstract describes a semiconductor device that has two common source/drain regions, which are separated from each other in one direction. There are two channel structures between these common source/drain regions, with one being above the other. Each channel structure is surrounded by a gate structure. The second channel structure is positioned higher than the first channel structure.
Original Abstract Submitted
A semiconductor device includes a first common source/drain and a second common source/drain spaced apart from each other in a first direction; a first channel structure between the first common source/drain and the second common source/drain, and a second channel structure between the first common source/drain and the second common source/drain and spaced apart from the first channel structure in a vertical direction; a first gate structure surrounding an upper surface, a lower surface, and side surfaces of the first channel structure; and a second gate structure surrounding an upper surface, a lower surface, and side surfaces of the second channel structure, and spaced apart from the first gate structure, wherein a level of the second channel structure is higher than a level of the first channel structure.
