US Patent Application 18134853. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18134853 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a three-dimensional semiconductor device and its fabrication methods.
- The device includes a first active region on a substrate with a lower channel pattern and a lower source/drain pattern connected to it.
- There is also a second active region above the first one, with an upper channel pattern and an upper source/drain pattern connected to it.
- The device has at least one gate electrode on both the lower and upper channel patterns.
- It also includes a first active contact connected to the lower source/drain pattern and a second active contact connected to the upper source/drain pattern.
- The lower and upper source/drain patterns are offset from each other in a first direction perpendicular to the vertical direction.
- The first active contact and the second active contact are spaced apart from each other in the first direction.
Original Abstract Submitted
Disclosed are three-dimensional semiconductor devices and their fabrication methods. The 3D semiconductor device includes a first active region on a substrate and including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region above the first active region and including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, at least one gate electrode on the lower and upper channel patterns, a first active contact electrically connected to the lower source/drain pattern, and a second active contact electrically connected to the upper source/drain pattern. A first central line of the lower source/drain pattern and a second central line of the upper source/drain pattern in a vertical direction are offset from each other in a first direction perpendicular to the vertical direction. The first active contact and the second active contact are spaced apart from each other in the first direction.
