US Patent Application 18133730. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seran Park of Pyeongtaek-si (KR)
Hyunsu Shin of Pyeongtaek-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133730 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with specific features and structures. Here is a simplified explanation of the abstract:
- The semiconductor device has a substrate that extends in two directions.
- There is a first active pattern on the substrate, protruding from the top surface and extending in one direction.
- An isolation pattern covers the sidewall of the first active pattern.
- Multiple first silicon patterns are spaced apart from each other in a direction perpendicular to the first direction.
- A first source/drain layer extends in the same direction as the first active pattern and is in contact with the sidewalls of the first silicon patterns.
- The sidewall of the first source/drain layer has a constant inclination with respect to the top surface of the substrate in the other direction.
- A gate structure fills the gap between the first silicon patterns and extends in the other direction.
Bullet points explaining the patent/innovation:
- The semiconductor device has a unique structure with specific patterns and layers.
- The first active pattern and first silicon patterns are arranged in a specific way to achieve desired functionality.
- The constant inclination of the first source/drain layer sidewall helps optimize performance.
- The gate structure fills the gap between the first silicon patterns, providing necessary connections and functionality.
- The described semiconductor device may have advantages in terms of performance, efficiency, or other desired characteristics.
Original Abstract Submitted
A semiconductor device including a substrate extending in a first direction and a second direction perpendicular to the first direction, a first active pattern protruding from a top surface of the substrate and extending in the first direction, an isolation pattern covering a sidewall of the first active pattern on the substrate, first silicon patterns spaced apart from each other in a third direction on the first active pattern, the third direction perpendicular to the first direction and second direction, a first source/drain layer extending in the third direction from a top surface of the first active pattern on the first active pattern, and in contact with sidewalls of the first silicon patterns, wherein a sidewall of the first source/drain layer in the second direction has a constant inclination with respect to the top surface of the substrate, and a gate structure extending in the second direction while filling a gap between the first silicon patterns on the substrate.
