US Patent Application 18133278. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:Dongjin Lee of Suwon-si (KR)]]

[[Category:Junhee Lim of Suwon-si (KR)]]

[[Category:Donghoon Kwon of Suwon-si (KR)]]

[[Category:Hakseon Kim of Suwon-si (KR)]]

[[Category:Nakjin Son of Suwon-si (KR)]]

[[Category:Yanghee Lee of Suwon-si (KR)]]

[[Category:Juhyun Lee of Suwon-si (KR)]]

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18133278 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a peripheral circuit region and a memory cell region.

• The peripheral circuit region has a first substrate, circuit elements, and a first interconnection structure.
• The memory cell region has a second substrate, gate electrodes, a cell region insulating layer, and channel structures.
• The peripheral circuit region also includes lower protective layers, one of which has a hydrogen diffusion barrier layer made of aluminum oxide.
• The hydrogen diffusion barrier layer prevents hydrogen from the cell region insulating layer from reaching the circuit elements.

Original Abstract Submitted

A semiconductor device includes a peripheral circuit region including a first substrate, circuit elements on the first substrate, a first interconnection structure electrically connected to the circuit elements, first to fourth peripheral region insulating layer; and a memory cell region including a second substrate on the peripheral circuit region and having a first region and a second region, gate electrodes stacked on the first region, a cell region insulating layer covering the gate electrodes, channel structures passing through the gate electrodes, and a second interconnection structure electrically connected to the gate electrodes and the channel structures. The peripheral circuit region further includes first to fourth lower protective layers, at least one of the first, second, third and fourth lower protective layers includes a hydrogen diffusion barrier layer configured to inhibit a hydrogen element included in the cell region insulating layer from diffusing to the circuit elements, and including aluminum oxide.