US Patent Application 18131258. SEMICONDUCTOR PACKAGE simplified abstract
Contents
SEMICONDUCTOR PACKAGE
Inventors
Junghoon Kang of Suwon-si (KR)
Seungwan Shin of Suwon-si (KR)
SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
- This abstract for appeared for patent application number 18131258 Titled 'SEMICONDUCTOR PACKAGE'
Simplified Explanation
The abstract describes a semiconductor package that consists of a layer that encapsulates a semiconductor chip, and another layer called the redistribution level layer. This redistribution level layer includes a redistribution layer and a redistribution insulating layer that insulates the redistribution layer. The abstract also mentions a laser mark area that is present on both the redistribution layer and the redistribution insulating layer. In this laser mark area, the redistribution insulating layer is made up of multiple mesh-type redistribution insulating patterns that are arranged separately from each other on a plane and surrounded by the redistribution layer. Additionally, the redistribution level layer includes a laser mark insulating layer that is located on top of the redistribution layer and the redistribution insulating layer. This laser mark insulating layer exposes the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.
Original Abstract Submitted
A semiconductor package includes an encapsulation layer encapsulating at least one semiconductor chip, and a redistribution level layer disposed on the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer insulating the redistribution layer, a laser mark area is disposed on the redistribution layer and the redistribution insulating layer, and the redistribution insulating layer of the laser mark area comprises a plurality of mesh-type redistribution insulating patterns arranged apart from each other on a plane and surrounded by the redistribution layer. The redistribution level layer includes a laser mark insulating layer located on the redistribution layer and the redistribution insulating layer, wherein the laser mark insulating layer includes a laser mark exposing the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.
