US Patent Application 18130769. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18130769 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device with specific components and arrangements. Here are the key points:
- The device includes an interlayer insulating layer.
- Embedded within the interlayer insulating layer are multiple first contact pads.
- Also embedded within the interlayer insulating layer are multiple first work function adjustment patterns.
- The first work function adjustment patterns are placed on top of the first contact pads.
- The device further includes multiple lower electrodes.
- The lower electrodes are positioned on top of the first work function adjustment patterns.
Overall, this patent application presents a specific configuration for a semiconductor memory device, involving the use of interlayer insulating layers, contact pads, work function adjustment patterns, and lower electrodes.
Original Abstract Submitted
A semiconductor memory device includes an interlayer insulating layer, a plurality of first contact pads embedded in the interlayer insulating layer, a plurality of first work function adjustment patterns embedded in the interlayer insulating layer and disposed on the plurality of first contact pads, and a plurality of lower electrodes disposed on the plurality of first work function adjustment patterns.
