SEMICONDUCTOR DEVICE

Inventors

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract for appeared for patent application number 18127895 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

This abstract describes a semiconductor device that includes several components. These components include a first substrate, an active pattern, a gate electrode, a source/drain region, a first interlayer insulating layer, a sacrificial layer, a lower wiring layer, a through via trench, a through via, a recess, and a through via insulating layer. The device is designed to allow for efficient electrical connections within the semiconductor.

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrate; a gate electrode extending on the active pattern; a source/drain region on the active pattern; a first interlayer insulating layer on the source/drain region; a sacrificial layer on the first substrate; a lower wiring layer on a lower surface of the sacrificial layer; a through via trench extending to the lower wiring layer by passing through the first interlayer insulating layer and the sacrificial layer in a vertical direction; a through via inside the through via trench and connected to the lower wiring layer; a recess inside the sacrificial layer and protruding from a sidewall of the through via trench in the second horizontal direction; and a through via insulating layer extending along the sidewall of the through via trench and into the recess.

US Patent Application 18127895. SEMICONDUCTOR DEVICE simplified abstract

Contents

SEMICONDUCTOR DEVICE

Inventors