METHOD FOR FORMING PHOTORESIST PATTERN AND METHOD FOR FORMING PATTERN ON A SUBSTRATE

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METHOD FOR FORMING PHOTORESIST PATTERN AND METHOD FOR FORMING PATTERN ON A SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18125936 titled 'METHOD FOR FORMING PHOTORESIST PATTERN AND METHOD FOR FORMING PATTERN ON A SUBSTRATE

Simplified Explanation

The patent application describes a method for forming a photoresist pattern on a substrate by using a silicon oxide layer.

The method involves forming a first photoresist pattern on the silicon oxide layer, which is in contact with the substrate.
The substrate with the first photoresist pattern is then subjected to entire-surface exposure.
After the exposure, the first photoresist pattern is removed by developing it.
Finally, a second photoresist pattern is formed on the silicon oxide layer.

This method allows for the precise formation of a photoresist pattern on a substrate, improving the overall quality and accuracy of the pattern.

Original Abstract Submitted

Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-surface exposure is performed on the substrate on which the first photoresist pattern having a defect is formed. The first photoresist pattern is entirely removed by developing the first photoresist pattern, which has been subject to the entire-surface exposure. In addition, a second photoresist pattern is formed on the silicon oxide layer.

US Patent Application 18125936. METHOD FOR FORMING PHOTORESIST PATTERN AND METHOD FOR FORMING PATTERN ON A SUBSTRATE simplified abstract

Contents

METHOD FOR FORMING PHOTORESIST PATTERN AND METHOD FOR FORMING PATTERN ON A SUBSTRATE

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