US Patent Application 18124592. ACOUSTIC WAVE DEVICE simplified abstract
Contents
ACOUSTIC WAVE DEVICE
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Katsuya Daimon of Nagaokakyo-shi (JP)
ACOUSTIC WAVE DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18124592 Titled 'ACOUSTIC WAVE DEVICE'
Simplified Explanation
The abstract describes an acoustic wave device that consists of several layers on a silicon substrate. These layers include a polysilicon layer, a silicon oxide layer, a piezoelectric layer, and an interdigital transducer electrode. The silicon substrate can have a plane orientation of (100), (110), or (111). The thickness of the piezoelectric layer is less than or equal to about one wavelength, where the wavelength is determined by the pitch of the electrode fingers on the interdigital transducer electrode.
Original Abstract Submitted
An acoustic wave device includes a silicon substrate, a polysilicon layer provided on the silicon substrate, a silicon oxide layer directly or indirectly provided on the polysilicon layer, a piezoelectric layer directly or indirectly provided on the silicon oxide layer, and an interdigital transducer electrode provided on the piezoelectric layer. A plane orientation of the silicon substrate is any one of (100), (110), and (111), and, where a wave length that is defined by an electrode finger pitch of the interdigital transducer electrode is λ, a thickness of the piezoelectric layer is less than or equal to about 1λ.
