US Patent Application 18121683. METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME simplified abstract

METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jimin Chae of Suwon-si (KR)

Younglim Park of Suwon-si (KR)

Dongmin Shin of Suwon-si (KR)

Jaesoon Lim of Suwon-si (KR)

METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18121683 titled 'METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING DRAM ELEMENT BY USING THE SAME

Simplified Explanation

The patent application describes a method of forming a capacitor.

• Lower electrodes are formed using a first metal.
• A support layer pattern is formed to connect the outer side walls of the lower electrodes.
• A first interface layer is formed on the lower electrodes and support layer pattern, consisting of a first metal oxide with conductivity.
• A second interface layer is formed on the first interface layer, consisting of a second metal oxide with conductivity.
• The second metal from the second interface layer is diffused onto the lower electrode surface, creating a first interface structure with both the first and second metals.
• The second interface structure on the support layer pattern is completely removed through an etching process.
• A dielectric layer is formed on the first interface structure and support layer pattern.
• An upper electrode is formed on the dielectric layer.

Original Abstract Submitted

A method of forming a capacitor includes forming lower electrodes including a first metal; forming a support layer pattern, which connects outer side walls of the lower electrodes to each other; forming a first interface layer including a first metal oxide having conductivity on the lower electrodes and the support layer pattern; forming a second interface layer including a second metal oxide having conductivity on the first interface layer; diffusing a second metal included in the second interface layer to a lower electrode surface so as to form a first interface structure including at least the first metal and the second metal on the lower electrode surface; completely removing at least the second interface structure formed on the support layer pattern through an etching process; forming a dielectric layer on the first interface structure and the support layer pattern; and forming an upper electrode on the dielectric layer.