US Patent Application 18119388. PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE simplified abstract

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PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Jonghoon Kim of Suwon-si (KR)

Suk Koo Hong of Suwon-si (KR)

Young Gyu Kim of Gunpo-si (KR)

Jooyoung Song of Suwon-si (KR)

Hae Min Yang of Seoul (KR)

Gumhye Jeon of Suwon-si (KR)

Juhee Kim of Seoul (KR)

Sunah Lee of Seoul (KR)

Ahhyun Lee of Seoul (KR)

Hong Won Lee of Seoul (KR)

PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18119388 titled 'PHOTORESIST COMPOSITION INCLUDING A CHRYSENE COMPOUND, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF FABRICATING 6-NITROCHRYSENE

Simplified Explanation

The patent application describes a photoresist composition used in forming patterns and a method of synthesizing 6-nitrochrysene. The photoresist composition includes several components such as a polymer resin, a photo acid generator, a quencher, an organic solvent, and an etching resistance enhancer. The etching resistance enhancer is represented by Chemical Formula 1.

  • The patent application focuses on a photoresist composition used in forming patterns and a method of synthesizing 6-nitrochrysene.
  • The photoresist composition includes a polymer resin, a photo acid generator, a quencher, an organic solvent, and an etching resistance enhancer.
  • The etching resistance enhancer is represented by Chemical Formula 1.
  • The invention aims to improve the etching resistance of the photoresist composition.
  • The method of synthesizing 6-nitrochrysene is also disclosed in the patent application.
  • The patent application provides a detailed description of the chemical components and their proportions in the photoresist composition.
  • The invention may have applications in various industries such as semiconductor manufacturing and lithography.


Original Abstract Submitted

A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,

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