US Patent Application 18117891. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18117891 Titled 'SEMICONDUCTOR DEVICE'
Simplified Explanation
This abstract describes a semiconductor device that includes various components such as an active pattern, gate structure, source/drain region, interlayer insulating layer, and contact structure. The contact structure consists of a contact plug, insulating liner, and conductive barrier layer. The conductive barrier layer has a portion that extends downward from the insulating liner.
Original Abstract Submitted
A semiconductor device includes: an active pattern extending in a first direction, parallel to an upper surface of a substrate, on the substrate; a gate structure extending in a second direction, intersecting the first direction, on the active pattern; a source/drain region disposed in a region, adjacent to the gate structure, on the active pattern; an interlayer insulating layer covering the gate structure and the source/drain region; and a contact structure penetrating through the interlayer insulating layer and contacting the source/drain region. The contact structure may include a contact plug, an insulating liner surrounding a sidewall of the contact plug, and a conductive barrier layer disposed between the insulating liner and the contact plug and on a bottom surface of the contact plug. The conductive barrier layer may have a barrier extension portion extending downwardly from a lower end of the insulating liner.
