US Patent Application 18117268. FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS simplified abstract
Contents
FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS
Organization Name
Inventor(s)
Go Shikata of San Jose CA (US)
Kitae Park of Cupertino CA (US)
FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18117268 Titled 'FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS'
Simplified Explanation
The abstract describes a memory device that has a memory array with multiple memory cells connected to wordlines and bitlines. The device also includes control logic that performs various operations. One of these operations involves determining a metadata value that represents the first read level voltage of the highest threshold voltage distribution of a subset of the memory cells. This metadata value can be a count of failed bytes or failed bits. Based on this metadata value, the control logic adjusts the second read level voltage for the second-highest threshold voltage distribution of the same subset of memory cells. Finally, the control logic applies the adjusted second read level voltage to a wordline to perform an initial calibrated read of the memory cells in the second-highest threshold voltage distribution.
Original Abstract Submitted
A memory device having a memory array with a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines and control logic coupled with the memory array. The control logic perform operations including: determining a metadata value characterizing a first read level voltage of a highest threshold voltage distribution of a subset of the plurality of memory cells, wherein the metadata value comprises at least one of a failed byte count or a failed bit count; adjusting, based on the metadata value, a second read level voltage for a second-highest threshold voltage distribution of the subset of the plurality of memory cells; and causing, to perform an initial calibrated read of the subset of the plurality of memory cells, the adjusted second read level voltage to be applied to a wordline of the plurality of wordlines to read the second-highest threshold voltage distribution.
