US Patent Application 18113717. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jong Hyun Paek of Suwon-si (KR)
Woo Jun Jeong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18113717 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device with a unique memory cell structure.
- The device includes a substrate, a first conductive line, and a second conductive line.
- The memory cell is located between the first and second conductive lines.
- The memory cell consists of a first electrode, a second electrode, and an OTS (Oxide Thin Film) layer.
- A high-concentration electrode is also present between the second electrode and the OTS film.
- The concentration of nitrogen in the second electrode is lower than in the high-concentration electrode.
- The logic state of the data stored in the OTS film is determined by the polarity of the program voltage.
Original Abstract Submitted
A semiconductor memory device includes a substrate, a first conductive line disposed on the substrate and extending in a first direction, a second conductive line disposed on the first conductive line, and extending in a second direction intersecting the first direction, and a memory cell disposed between the first conductive line and the second conductive line, wherein the memory cell includes, a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, an OTS film disposed between the first electrode and the second electrode, a high-concentration electrode disposed between the second electrode and the OTS film, wherein a concentration of nitrogen contained in the second electrode is lower than a concentration of nitrogen contained in the high-concentration electrode, wherein a logic state of data stored in the OTS film is based on a polarity of a program voltage.
