US Patent Application 18108146. LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
Contents
LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Organization Name
Samsung Display Co., Ltd.
Inventor(s)
Dongchan Kim of Yongin-si (KR)
Hakchoong Lee of Yongin-si (KR)
LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18108146 Titled 'LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME'
Simplified Explanation
This abstract describes a light-emitting device and an electronic apparatus that includes the device. The light-emitting device consists of a first electrode, a second electrode facing the first electrode, and an interlayer between them. The interlayer contains multiple emitting parts and charge generation parts. The charge generation parts are located between two adjacent emitting parts. The number of emitting parts is represented by the integer 'm', which is equal to or greater than 2. One of the charge generation parts includes an n-type charge generation layer, a first p-type charge generation layer, and a second p-type charge generation layer. The band gap of the second p-type charge generation layer is larger than the band gap of the first p-type charge generation layer.
Original Abstract Submitted
Embodiments provide a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes m emitting parts, and m−1 charge generation parts between two adjacent ones of the emitting parts, wherein m is an integer of 2 or more. At least one of the charge generation parts includes an n-type charge generation layer, a first p-type charge generation layer, and a second p-type charge generation layer. A band gap of the second p-type charge generation layer is greater than a band gap of the first p-type charge generation layer.
