US Patent Application 18104882. SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18104882 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device with specific components and their arrangement.
- The device includes a substrate, first and second electrodes, an OTS film, and an electrode spacer film.
- The OTS film is positioned between the first and second electrodes and has three surfaces: one in contact with the first electrode, one in contact with the second electrode, and one in contact with the electrode spacer film.
- The logical state of data stored in the OTS film is determined by the polarity of a program voltage.
- The innovation lies in the specific arrangement and configuration of the components in the semiconductor memory device.
Original Abstract Submitted
A semiconductor memory device includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, an OTS film between the first electrode and the second electrode, and an electrode spacer film disposed on a part of a side wall of the OTS film, wherein the OTS film includes a first surface that is in contact with the first electrode, a second surface that is in contact with the second electrode, and a third surface that is in contact with the electrode spacer film, and a logical state of data stored in the OTS film is based on polarity of a program voltage.
